AT45DB642D DATASHEET PDF

Please refer to data sheets for detailed information. To select how PB3 and PB4 should be used, the jumpers labeled PB3 and PB4 must be set correctly. Description. The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program. Explore the latest datasheets, compare past datasheet revisions, and confirm part Datasheet for AT45DBD-CNUReel AT45DBD-CNU-SL

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PUW Changed t from max Manufacturer ID codes that are two, three or even four bytes long with the first byte s in the sequence being 7FH. The device operates from a single power supply, 2. Copy your embed code and put on your site: Configuration Register is a user-programmable nonvolatile regis- ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes.

Parts ordered aat45db642d suffix SL are shipped in bulk with the page size set to bytes.

Datasheet: AT45DBD : Free Download, Borrow, and Streaming : Internet Archive

Dimensions D1 and E do not include mold protrusion. The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register. Main Memory Page to Buffer 1 or 2 Compare 7. Page 37 Output Test Load The device density is indicated using bits and 2 of the status register. AC Waveforms Six different timing waveforms are shown below.

Main Memory Page Read Opcode: Main Memory Page to Buffer 1 or 2 Transfer 6. VCSL Changed t from max. Page 13 Software Sector Protection 8. Download datasheet 2Mb Share this page. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products.

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Other algorithms can be used to rewrite portions of the Flash array. Standard parts are shipped with the page size set to bytes. Page 35 Table The first 13 bits PA12 – PA0 of the bit address sequence specify which page of the main memory array to read, and the last 11 bits BA10 – BA0 of the bit address sequence specify the starting byte address within the page.

Auto Page Rewrite Group C commands consist of: The DataFlash is designed to Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.

Slave clocks out BYTE a first output byte. Fixed tim- ing is not recommended. Memory Array To provide optimal flexibility, the memory array of the AT45DBD is at45db642v into three levels of granularity comprising of sectors, blocks, and pages. Software Sector Protection 8.

AT45DB642D Datasheet PDF

To perform a buffer to main dafasheet page program with built-in erase for the The user is able to configure these parts to a byte page size if desired. Unless otherwise specified tolerance: To allow for simple in-system reprogrammability, the AT45DBD does not require high input voltages qt45db642d programming.

Page 31 Table Master clocks in BYTE h last output byte. The Block Erase function is not affected by the Chip Erase issue. Command Sector Lockdown Figure The entire main memory can be erased at one time by using the Chip Erase command. Therefore not possible to only program the first two bytes of the register and then pro- datashee the remaining 62 bytes at a later time.

Reading the Sector Lockdown Register The Sector Lockdown Register can be read to determine which sectors in the memory array are permanently locked down.

Therefore, the contents of the buffer will be altered from its previous state when this command is issued. Being able to reprogram the At45db462d Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely.

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All program operations to the DataFlash occur on a page by page basis Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector.

Page 39 Utilizing the RapidS To take at45db642e of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.

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Since the entire memory array erased, no address bytes need to be clocked at45db624d the device, and any data clocked in after the opcode will be ignored The surface finish of the package shall be EDM Charmille The information in this document is provided zt45db642d connection with Atmel products. The algorithm will be repeated sequentially for each page within the entire array. Command Resume from Deep Power-down Figure Use Block Erase opcode 50H alternative. Master clocks in BYTE a. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation.

The Sector Protection Register can be reprogrammed while the at45rb642d protection enabled or dis- abled.

For Atmel and some other manufacturersthe Manufacturer ID data is comprised of only one byte. Main Memory Page Program through Buffer 1 or 2 The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the at45dbb642d buffer can still be performed.